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1 article(s) from Iakimov, Tihomir

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

Ivan Shtepliuk,
Jens Eriksson,
Volodymyr Khranovskyy,
Tihomir Iakimov,
Anita Lloyd Spetz and
Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

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Figure 1: Sketch of the graphene/4H-SiC vertical device.

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Figure 2: Current–voltage characteristics of the vertical graphene–4H-SiC device. The y-axis indicates the ab...

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Figure 3: Current–voltage characteristics of the vertical device after the Pd contacts were glued with conduc...

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Figure 4: The typical I–V curve, which describes the voltage and the current flowing through the graphene cha...

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Figure 5: Isosurfaces of the molecular orbitals of the pristine C₃₀H₁₄ cluster before and after interaction w...

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Figure 6: (a) Dependence of the binding energies of Cd and Hg on the number of heavy metal atoms on graphene ...

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Figure 7: Dependence of the binding energy and HOMO-LUMO gap on number of Pb atoms. The top X axis represents...

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Figure 8: Total and projected DOS (PDOS) for graphene flakes atoms of the heavy metals: C₁₆H₁₀ cluster withou...

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Figure 9: Calculated current–voltage characteristics of the graphene/SiC junction before and after interactio...

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Figure 10: Histogram plot of graphene/SiC device sensitivity (at fixed voltage of 1 V) towards different heavy...

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Figure 11: Dependence of the sensitive parameter (ratio of work functions of graphene before and after interac...

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Full Research Paper

Published 22 Nov 2016

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